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Magnetoresistance of highly resistive AlPdRe quasicrystals
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 334, 427-430 p.Article in journal (Refereed) Published
Abstract [en]

The temperature dependence of the conductivity, sigma(T), and the magnetoresistance (MR), Deltarho(B)/rho, have been studied from below 0.05-300 K for two i-AlPdRe samples on the insulating side of the metal insulator transition. The temperature dependence of resistivity and MR show that there is a definite change in transport mechanism below 20 K. The MR is positive below I K. At intermediate temperatures a negative component develops and at temperatures above similar to40 K the MR is small. The magnetoresistance results are discussed in the framework of Efros-Shklovsksii (ES) variable range hopping. With decreasing temperature the characteristic field regions that describe ES hopping are successively depressed towards smaller magnetic fields and vanish. These results support an insulating ground state in samples with large resistance ratios.

Place, publisher, year, edition, pages
2004. Vol. 334, 427-430 p.
Keyword [en]
metal-insulator-transition, al-pd-re, i-alpdre, conductivity, localization, alloys, regime
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-23213DOI: 10.1016/j.jnoncrysol.2003.12.017ISI: 000189274200088ScopusID: 2-s2.0-1142288374OAI: diva2:341911
QC 20100525 QC 20111019Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-10-28Bibliographically approved

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Srinivas, VigneshRapp, Östen.
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