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Bistable defect in mega-electron-volt proton implanted 4H silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, no 10, 1704-1706 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1x10(12) cm(-2) creates an estimated initial concentration of intrinsic point defects of about 10(14) cm(-3) of which about 10% remain after the implantation and gives rise to deep states in the upper part of the band gap. Here, we investigate the samples prior to high-temperature annealing and a very complex spectrum is revealed. In particular, a bistable defect M is discovered having two DLTS peaks, M-1 and M-3 at E-C-0.42 and around E-C-0.75 eV, respectively, in one configuration and one peak, M-2 at E-C-0.70 eV in the other configuration. The charge dependent thermal activation energies for the transformation between the bistable defect peaks are 0.90 and 1.40 eV.

Place, publisher, year, edition, pages
2004. Vol. 84, no 10, 1704-1706 p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-23225DOI: 10.1063/1.1651656ISI: 000189384900028Scopus ID: 2-s2.0-1842479596OAI: oai:DiVA.org:kth-23225DiVA: diva2:341923
Note
QC 20100525 QC 20111027Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2012-03-21Bibliographically approved
In thesis
1. Capacitance transient measurements on point defects in silicon and silicol carbide
Open this publication in new window or tab >>Capacitance transient measurements on point defects in silicon and silicol carbide
2005 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

Electrically active point defects in semiconductor materials are important because they strongly affect material properties like effective doping concentration and charge carrier lifetimes. This thesis presents results on point defects introduced by ion implantation in silicon and silicon carbide. The defects have mainly been studied by deep level transient spectroscopy (DLTS) which is a quantitative, electrical characterization method highly suitable for point defect studies. The method is based on measurements of capacitance transients and both standard DLTS and new applications of the technique have been used.

In silicon, a fundamental understanding of diffusion phenomena, like room-temperature migration of point defects and transient enhanced diffusion (TED), is still incomplete. This thesis presents new results which brings this understanding a step closer. In the implantation-based experimental method used to measure point defect migration at room temperature, it has been difficult to separate the effects of defect migration and ion channeling. For various reasons, the effect of channeling has so far been disregarded in this type of experiments. Here, a very simple method to assess the amount of channeling is presented, and it is shown that channeling dominates in our experiments. It is therefore recommended that this simple test for channeling is included in all such experiments. This thesis also contains a detailed experimental study on the defect distributions of vacancy and interstitial related damage in ion implanted silicon. Experiments show that interstitial related damage is positioned deeper (0.4 um or more) than vacancy related damage. A physical model to explain this is presented. This study is important to the future modeling of transient enhanced diffusion.

Furthermore, the point defect evolution in low-fluence implanted 4H-SiC is investigated, and a large number of new defect levels has been observed. Many of these levels change or anneal out at temperatures below 300 C, which is not in accordance with the general belief that point defect diffusion in SiC requires high temperatures. This thesis also includes an extensive study on a metastable defect which we have observed for the first time and labeled the M-center. The defect is characterized with respect to DLTS signatures, reconfiguration barriers, kinetics and temperature interval for annealing, carrier capture cross sections, and charge state identification. A detailed configuration diagram for the M-center is presented.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. viii, 89 p.
Series
Trita-FTE, ISSN 0284-0545 ; 2005:2
Keyword
Electronics, Elektronik
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-211 (URN)91-7178-038-6 (ISBN)
Public defence
2005-05-29, Sal C1, KTH-Electrum, 10:15
Opponent
Supervisors
Note
QC 20101028Available from: 2005-05-20 Created: 2005-05-20 Last updated: 2010-10-28Bibliographically approved

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Hallén, Anders.

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