Bistable defect in mega-electron-volt proton implanted 4H silicon carbide
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, no 10, 1704-1706 p.Article in journal (Refereed) Published
Epitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1x10(12) cm(-2) creates an estimated initial concentration of intrinsic point defects of about 10(14) cm(-3) of which about 10% remain after the implantation and gives rise to deep states in the upper part of the band gap. Here, we investigate the samples prior to high-temperature annealing and a very complex spectrum is revealed. In particular, a bistable defect M is discovered having two DLTS peaks, M-1 and M-3 at E-C-0.42 and around E-C-0.75 eV, respectively, in one configuration and one peak, M-2 at E-C-0.70 eV in the other configuration. The charge dependent thermal activation energies for the transformation between the bistable defect peaks are 0.90 and 1.40 eV.
Place, publisher, year, edition, pages
2004. Vol. 84, no 10, 1704-1706 p.
IdentifiersURN: urn:nbn:se:kth:diva-23225DOI: 10.1063/1.1651656ISI: 000189384900028ScopusID: 2-s2.0-1842479596OAI: oai:DiVA.org:kth-23225DiVA: diva2:341923
QC 20100525 QC 201110272010-08-102010-08-102012-03-21Bibliographically approved