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Strain and electrical characterization of boron-doped SiGeC layers grown by chemical vapor deposition
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
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2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 31-33 p.Article in journal (Refereed) Published
Abstract [en]

Incorporation, induced strain and electrical properties of boron and carbon in Si1-x-yGexCy epitaxial layers (x = 0.23 and 0.28 with y = 0 and 0.005) grown by chemical vapour deposition (CVD) have been studied. The boron concentration in the epitaxial layers was in the range of 3 x 10(18)-1 x 10(21) cm(-3). The growth rate enhanced weakly by increasing boron partial pressure up to 0.002 mtorr ( corresponding to 2 x 10(19) cm(-3)) where a significant increase in deposition rate was observed. In SiGeC layers, the active boron concentration was obtained from the strain compensation amount. It was also found that the boron atoms have a tendency to locate at substitutional sites more preferentially compared to carbon. The incorporation of boron in SiGeC layers was clearly improved in the range 2 x 10(19)-3 x 10(20) cm(-3). These investigations also enabled an estimation of the Hall scattering factor of the SiGeC layers. A comparison between our results with the previous theoretical calculations showed a good agreement. This created the possibility to evaluate the drift mobility in our samples.

Place, publisher, year, edition, pages
2004. Vol. T114, 31-33 p.
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Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:kth:diva-23234DOI: 10.1088/0031-8949/2004/T114/006ISI: 000204272000007Scopus ID: 2-s2.0-39549120645OAI: oai:DiVA.org:kth-23234DiVA: diva2:341932
Note
QC 20100525 QC 20111102Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-11-02Bibliographically approved

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Hållstedt, Julius.Parent, ArnaudZhang, Shi-LiÖstling, MikaelRadamson, Henry H.
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