Strain and electrical characterization of boron-doped SiGeC layers grown by chemical vapor deposition
2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 31-33 p.Article in journal (Refereed) Published
Incorporation, induced strain and electrical properties of boron and carbon in Si1-x-yGexCy epitaxial layers (x = 0.23 and 0.28 with y = 0 and 0.005) grown by chemical vapour deposition (CVD) have been studied. The boron concentration in the epitaxial layers was in the range of 3 x 10(18)-1 x 10(21) cm(-3). The growth rate enhanced weakly by increasing boron partial pressure up to 0.002 mtorr ( corresponding to 2 x 10(19) cm(-3)) where a significant increase in deposition rate was observed. In SiGeC layers, the active boron concentration was obtained from the strain compensation amount. It was also found that the boron atoms have a tendency to locate at substitutional sites more preferentially compared to carbon. The incorporation of boron in SiGeC layers was clearly improved in the range 2 x 10(19)-3 x 10(20) cm(-3). These investigations also enabled an estimation of the Hall scattering factor of the SiGeC layers. A comparison between our results with the previous theoretical calculations showed a good agreement. This created the possibility to evaluate the drift mobility in our samples.
Place, publisher, year, edition, pages
2004. Vol. T114, 31-33 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-23234DOI: 10.1088/0031-8949/2004/T114/006ISI: 000204272000007ScopusID: 2-s2.0-39549120645OAI: oai:DiVA.org:kth-23234DiVA: diva2:341932
QC 20100525 QC 201111022010-08-102010-08-102011-11-02Bibliographically approved