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As- or P-doped Si layers grown by RPCVD for emitter application in SiGeCHBTs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 34-36 p.Article in journal (Refereed) Published
Abstract [en]

A new module for the emitter formation in a bipolar transistor is presented. Arsenic- or phosphorus-doped polycrystalline silicon layer for the emitter formation is deposited in a reduced pressure chemical vapor deposition reactor using silane as the silicon source gas. Characteristics such as the carrier concentration, conductivity, surface morphology, and thermal stability of the polycrystalline-silicon layer as well as the influence this layer has on a SiGeC transistor structure during the drive-in step area studied. The active carrier concentration of the as-grown sample is strongly dependent on the deposition temperature, especially arsenic doped layers which exhibit more than one order of magnitude difference. However, the carrier concentration for the As- or P-doped layer were comparable to that of a standard in-situ doped poly-crystalline layer after a dopant activation at 925 degrees C for 10s.

Place, publisher, year, edition, pages
2004. Vol. T114, 34-36 p.
Keyword [en]
chemical-vapor-deposition
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23235DOI: 10.1088/0031-8949/2004/T114/007ISI: 000204272000008Scopus ID: 2-s2.0-39549101428OAI: oai:DiVA.org:kth-23235DiVA: diva2:341933
Note
QC 20100525 QC 20111031Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Suvar, ErdalHaralson, ErikHållstedt, JuliusRadamson, Henry H.Östling, Mikael
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