As- or P-doped Si layers grown by RPCVD for emitter application in SiGeCHBTs
2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 34-36 p.Article in journal (Refereed) Published
A new module for the emitter formation in a bipolar transistor is presented. Arsenic- or phosphorus-doped polycrystalline silicon layer for the emitter formation is deposited in a reduced pressure chemical vapor deposition reactor using silane as the silicon source gas. Characteristics such as the carrier concentration, conductivity, surface morphology, and thermal stability of the polycrystalline-silicon layer as well as the influence this layer has on a SiGeC transistor structure during the drive-in step area studied. The active carrier concentration of the as-grown sample is strongly dependent on the deposition temperature, especially arsenic doped layers which exhibit more than one order of magnitude difference. However, the carrier concentration for the As- or P-doped layer were comparable to that of a standard in-situ doped poly-crystalline layer after a dopant activation at 925 degrees C for 10s.
Place, publisher, year, edition, pages
2004. Vol. T114, 34-36 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-23235DOI: 10.1088/0031-8949/2004/T114/007ISI: 000204272000008ScopusID: 2-s2.0-39549101428OAI: oai:DiVA.org:kth-23235DiVA: diva2:341933
QC 20100525 QC 201110312010-08-102010-08-102011-10-31Bibliographically approved