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High frequency performance of SiGeCHBTs with selectively & non-selectively grown collector
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, 138-141 p.Article in journal (Refereed) Published
Abstract [en]

Two high-frequency heterojunction bipolar transistor (HBT) architectures based on SiGeC have been fabricated and characterized. Different collector designs were applied either by using selective epitaxial growth doped with phosphorous or by non-selective epitaxial growth doped with arsenic. Both designs have a non-selectively deposited SiGeC base doped with boron and a poly-crystalline emitter doped with phosphorous. Both HBT designs exhibit similar electrical characteristics with a peak DC current gain of around 1600 and a BVCEO of 1.8V. The cut-off frequency (f(T)) and maximum frequency of oscillation (f(max)) vary from 40-80 GHz and 15-30 GHz, respectively, depending on lateral design relations. Good high frequency performance for a device with a selectively grown collector is demonstrated for the first time.

Place, publisher, year, edition, pages
2004. Vol. T114, 138-141 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23236DOI: 10.1088/0031-8949/2004/T114/035ISI: 000204272000036Scopus ID: 2-s2.0-39549106473OAI: oai:DiVA.org:kth-23236DiVA: diva2:341934
Note
QC 20100525 QC 20111102Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2012-03-21Bibliographically approved

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Malm, B. Gunnar

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