Change search
ReferencesLink to record
Permanent link

Direct link
Quantifying hole mobility degradation in pMOSFETs with a strained-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6705-1660
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
Show others and affiliations
2004 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 48, no 5, 721-729 p.Article in journal (Refereed) Published
Abstract [en]

An appreciable mobility enhancement up to 35% is found in p-channel MOSFETs with a stramed-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlOchi/Al2O3 gate stack, as compared to a Si-channel reference transistor under an identical gate stack. A distorted effective mobility curve with a slow mobility roll-off at low vertical electric field is however extracted for the Si0.7Ge0.3 devices following the standard split-CV measurement procedure. A high density of interface traps on the order of 10(12) cm(-2) eV(-1) is found in these Si0.7Ge0.3 devices using charge-pumping measurements. Thus, this distortion is attributed partly to trapping of a significant fraction of the inversion carriers at the interface between the high-kappa dielectrics and the Si0.7Ge0.3 channel, thus defeating the validity of the usual formulation for mobility extraction. By taking into account the trapped carriers that are detectable by the split-CV measurement but do not contribute to the drain conductance, a corrected effective mobility curve is obtained. The distortion of the effective mobility curve is nonetheless mainly due to mobility degradation as a result of Coulomb scattering of the mobile channel carriers by the charged interface defects, i.e. charged traps or trapped carriers that remain charged.

Place, publisher, year, edition, pages
2004. Vol. 48, no 5, 721-729 p.
Keyword [en]
high-K, mobility, interface traps, strained-SiGel, MOSFET, atomic layer chemical vapour deposition (ALD), electron-mobility, inversion-layers, carrier mobility, mosfets, sige, transistors
URN: urn:nbn:se:kth:diva-23249DOI: 10.1016/j.sse.2003.09.035ISI: 000220123300012ScopusID: 2-s2.0-1242310461OAI: diva2:341947
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Hellström, Per-ErikZhang, Shi-LiÖstling, Mikael
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Solid-State Electronics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 22 hits
ReferencesLink to record
Permanent link

Direct link