Electrically active defects in irradiated 4H-SiC
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 9, 4728-4733 p.Article in journal (Refereed) Published
4H-SiC epilayers were irradiated with either protons or electrons and electrically active defects were studied by means of deep level transient spectroscopy. Motion of defects has been found to occur at temperature as low as 350-400 K. Indeed, the application of an electric field has been found to enhance modifications in defect concentrations that can also occur during long time annealing at elevated temperature. Two levels have been revealed and labeled B and M. Two other levels, referred to as S-1 and S-2 and located at 0.40 and 0.71 eV below the conduction band edge have been studied in detail (capture cross sections, profiling, formation energy, activation energy during annealing). The S-1 and S-2 levels have been found to exhibit a one to one relation and are proposed to be two charge states of the same acceptor center, labeled the S center.
Place, publisher, year, edition, pages
2004. Vol. 95, no 9, 4728-4733 p.
point-defects, ion-drift, silicon
IdentifiersURN: urn:nbn:se:kth:diva-23338DOI: 10.1063/1.1689731ISI: 000220875400028ScopusID: 2-s2.0-2442703238OAI: oai:DiVA.org:kth-23338DiVA: diva2:342036
QC 20100525 QC 201110252010-08-102010-08-102011-10-25Bibliographically approved