Influence of surface treatment prior to ALD high-kappa dielectrics on the performance of SiGe surface-channel pMOSFETs
2004 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 25, no 5, 289-291 p.Article in journal (Refereed) Published
Compressively strained Si0.7Ge0.3 surface-channel pMOSFETs with atomic layer deposition (ALD) Al2O3/HfO2/Al2O3 nanolaminate and low-pressure chemical vapor deposition p(+) poly-SiGe gate electrode were fabricated. Surface treatment with either hydrogen fluoride (HF) clean, or HF clean followed by water rinse was performed prior to the ALD processing. The devices with water rinse show a good control of interfacial layer and device reproducibility, while the devices without water rinse lack a clearly observable interfacial layer and show scattered electrical characteristics and distorted mobility curve. A similar to20% increase in hole mobility compared to the Si universal mobility and a similar to0.6-nm-thick continuous interfacial layer are obtained for the pMOSFETs with water rinse.
Place, publisher, year, edition, pages
2004. Vol. 25, no 5, 289-291 p.
atomic layer deposition (ALD), high-kappa, MOSFET, SiGe, surface, channel, surface treatment, gate dielectrics, layers
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-23374DOI: 10.1109/led.2004.826523ISI: 000221180900021ScopusID: 2-s2.0-2442432627OAI: oai:DiVA.org:kth-23374DiVA: diva2:342072
QC 201005252010-08-102010-08-102011-11-02Bibliographically approved