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Influence of surface treatment prior to ALD high-kappa dielectrics on the performance of SiGe surface-channel pMOSFETs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6705-1660
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2004 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 25, no 5, 289-291 p.Article in journal (Refereed) Published
Abstract [en]

Compressively strained Si0.7Ge0.3 surface-channel pMOSFETs with atomic layer deposition (ALD) Al2O3/HfO2/Al2O3 nanolaminate and low-pressure chemical vapor deposition p(+) poly-SiGe gate electrode were fabricated. Surface treatment with either hydrogen fluoride (HF) clean, or HF clean followed by water rinse was performed prior to the ALD processing. The devices with water rinse show a good control of interfacial layer and device reproducibility, while the devices without water rinse lack a clearly observable interfacial layer and show scattered electrical characteristics and distorted mobility curve. A similar to20% increase in hole mobility compared to the Si universal mobility and a similar to0.6-nm-thick continuous interfacial layer are obtained for the pMOSFETs with water rinse.

Place, publisher, year, edition, pages
2004. Vol. 25, no 5, 289-291 p.
Keyword [en]
atomic layer deposition (ALD), high-kappa, MOSFET, SiGe, surface, channel, surface treatment, gate dielectrics, layers
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23374DOI: 10.1109/led.2004.826523ISI: 000221180900021Scopus ID: 2-s2.0-2442432627OAI: oai:DiVA.org:kth-23374DiVA: diva2:342072
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hellström, Per-Erik

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Wu, DonpingRadamson, Henry H.Hellström, Per-ErikÖstling, Mikael
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