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Dielectric relaxation behavior of Ag(Ta,Nb)O-3 interdigital capacitors on oxide substrates
KTH, Superseded Departments, Physics.
KTH, Superseded Departments, Physics.
2004 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 43, no 4A, 1434-1437 p.Article in journal (Refereed) Published
Abstract [en]

The time-dependent dielectric relaxation behavior of Ag(Ta,Nb)O-3 interdigital capacitors was investigated for tunable device applications. Ag(Ta,Nb)03 thin films, which have high k-factor (tunability/ loss tangent), were deposited on the oxide substrates by pulsed laser deposition technique. Ag(Ta,Nb)03 thin film on the LaAlO3 substrate has an epitaxial relationship with the substrate. The observed tunabilities and K-factors of Ag(Ta,Nb)O-3/LaAlO3 and Ag(Ta,Nb)O-3/AI(2)O(3) interdigital capacitors were 5.9% and 17.8 and 3.8% and 9.9, respectively, at 40 V (maximum electric field of 100 kV/cm), 300 K, and 1 MHz. Capacitance relaxation follows the power law C(t) = C-infinity + C-0(t/ls)-(beta) with a very small exponent negligibly fitted in the time domain. Due to this small exponent, the capacitance was changed by less than 0.05% in 2V in 71 s. Time-dependent leakage current was measured by employing the Ag(Ta,Nb)O-3(0.4mum)/Al2O3 interdigital capacitor. The time-dependent relaxation current follows the power law j(t) = j(leak) +j(0)(t/ls)-(alpha) with an exponent alpha = 0-98, j(leak) = 1.14 x 10(-14), and j(0) = 11.42s.

Place, publisher, year, edition, pages
2004. Vol. 43, no 4A, 1434-1437 p.
Keyword [en]
relaxation, interdigital capacitors, power law, epitaxy, K-factor, thin-films, electrodes
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-23378DOI: 10.1143/jjap.43.1434ISI: 000221200400038Scopus ID: 2-s2.0-3042774172OAI: oai:DiVA.org:kth-23378DiVA: diva2:342076
Note
QC 20100525 QC 20111028Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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