Formation of shallow junctions by HCl-based Si etch followed by selective epitaxy of B-doped Si1-xGex in RPCVD
2004 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 151, no 6, C365-C368 p.Article in journal (Refereed) Published
Formation of shallow source/drain junctions by using HCl-based Si etch followed by selective deposition of in situ heavily B-doped SiGe in a reduced pressure chemical vapor deposition reactor is presented. The etching parameters were optimized to obtain a smooth surface prior to deposition of the SiGe layers. In the epitaxy process, SiGe layers with a resistivity of 5 x 10(-4) Omega cm were obtained by tuning the partial pressure of the B and Ge precursors. A problem with selectivity in the epitaxy step was encountered when combing the etch and growth processes, but a practical solution is presented. Integration issues such as loading effect, pile-up, and defect generation have also been investigated.
Place, publisher, year, edition, pages
2004. Vol. 151, no 6, C365-C368 p.
gas-phase, silicon, growth, layers, films
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-23417DOI: 10.1149/1.1737387ISI: 000221437300035ScopusID: 2-s2.0-2942668441OAI: oai:DiVA.org:kth-23417DiVA: diva2:342115
QC 201005252010-08-102010-08-102010-10-27Bibliographically approved