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Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6705-1660
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2004 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 109, no 03-jan, 122-126 p.Article in journal (Refereed) Published
Abstract [en]

Various methods to reduce both global and local loading effect during non-selective and selective epitaxial growth of Si1-x-yGexCy (0.09 less than or equal to x less than or equal to 0.28 and 0 less than or equal to y less than or equal to 0.01) layers have been proposed. Evaluation of the proposed solutions for issues such as defect generation and the possibility for integration in device structures have been performed. The key point in these methods is based on reduction of surface diffusion of the adsorbed species on the oxide. In non-selective epitaxy, this was achieved by introducing a thin silicon polycrystalline seed layer on the oxide prior to Si1-x-yGexCy deposition. The thickness of this seed layer had a crucial role on both the global and local loading effect, and also on the epitaxial quality. Higher carbon content (y greater than or equal to 0.006) in Si1-x-yGexCy layers had no noticeable influence on the loading effect, however, the defect density was clearly increased in these layers. In selective epitaxy case, introducing square polycrystalline Si stripes around the oxide openings acting as diffusion barriers have reduced the loading effect effectively. Meanwhile, using Si nitride stripes showed no visible effect on Si1-x-yGexCy layer profile. Further decrease in loading effect can be performed by increasing the HCl partial pressure during epitaxy. Chemical-mechanical polishing (CMP) was performed to remove the polycrystalline stripe on the oxide.

Place, publisher, year, edition, pages
2004. Vol. 109, no 03-jan, 122-126 p.
Keyword [en]
epitaxy, CVD, Si, SiGeC, chemical-vapor-deposition, heterostructures, si
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-23446DOI: 10.1016/j.mseb.2003.10.062ISI: 000221657000026Scopus ID: 2-s2.0-2342511524OAI: oai:DiVA.org:kth-23446DiVA: diva2:342144
Note
QC 20100525, QC 20111014. Symposium on Functional Metal Oxides - Semiconductor Structures held at the E-MRS 2003 Meeting. Strasbourg, FRANCE. JUN 10-13, 2003 Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hellström, Per-Erik

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Hållstedt, JuliusSuvar, ErdalMenon, CyrilHellström, Per-ErikÖstling, MikaelRadamson, Henry H.
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Condensed Matter Physics

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