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Cerium-induced reconstructions on the Si(111) surface
KTH, Superseded Departments, Materials Science and Engineering.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-7409-575X
2004 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 558, no 03-jan, 49-56 p.Article in journal (Refereed) Published
Abstract [en]

Scanning tunnelling microscopy has been used to investigate cerium-induced reconstructions on Si(1 1 1). Room temperature deposition of submonolayers of Ce is reactive and produces an intricate two layer silicide structure: a root7 x root7 phase on top of a 2root3 x 2root3 reconstruction, co-existing with the bare Si(1 1 1)-7x7 surface. Annealing the submonolayer-covered surface at 600degreesC generates a one-dimensional (5x2) structure comprising both Cc and Si adatoms. This structure coexists with the bare 7x7 and a 2x3 structure with cerium adatoms in alternating H-3 and T-4 positions.

Place, publisher, year, edition, pages
2004. Vol. 558, no 03-jan, 49-56 p.
Keyword [en]
silicon, cerium, scanning tunneling microscopy, single crystal surfaces, surface relaxation and reconstruction, scanning-tunneling-microscopy, interface, metal, ce, er, gd
National Category
Physical Chemistry
URN: urn:nbn:se:kth:diva-23461DOI: 10.1016/j.susc.2004.04.006ISI: 000221728000006ScopusID: 2-s2.0-2342517365OAI: diva2:342159
QC 20100525 QC 20111027. Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-10-27Bibliographically approved

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Rad, GoshtasbiGöthelid, MatsKarlsson, Ulf O.
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