Design optimization of InGaAsP-InGaAlAs 1.55 mu m strain-compensated MQW lasers for direct modulation applications
2004 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 19, no 5, 615-625 p.Article in journal (Refereed) Published
In this paper, a simulation study of InGaAsP(well)/InGaAlAs(barrier) 1.55 mum strain-compensated multi-quantum well (MQW) lasers is presented. Due to a large conduction band discontinuity in this material system, a higher material gain and differential gain can be obtained from such a quantum well (QW) as compared to a traditional InGaAsP/InGaAsP quantum well. The deeper electron well should also improve elevated temperature operating characteristics and reduce the electron spillover from QWs. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and the strain in the barriers. A large number of quantum wells can be uniformly pumped, reducing the carrier density in each individual well. A uniform and low carrier density in all the wells help reduce the total Auger recombination current. High p-doping in the active region is shown to enhance the carrier and gain non-uniformity in the MQWs. A simulated high modulation bandwidth has been demonstrated, promising directly modulated lasers as a low-cost source for short to medium distance (1-10 km) high speed optical links.
Place, publisher, year, edition, pages
2004. Vol. 19, no 5, 615-625 p.
quantum-well lasers, differential gain, carrier transport, band offsets, layer, wavelength, bandwidth, diodes, inp, performance
IdentifiersURN: urn:nbn:se:kth:diva-23462DOI: 10.1088/0268-1242/19/5/010ISI: 000221732000014ScopusID: 2-s2.0-2542481881OAI: oai:DiVA.org:kth-23462DiVA: diva2:342160
QC 201008272010-08-102010-08-102014-12-09Bibliographically approved