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Design optimization of InGaAsP-InGaAlAs 1.55 mu m strain-compensated MQW lasers for direct modulation applications
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0003-3056-4678
2004 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 19, no 5, 615-625 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, a simulation study of InGaAsP(well)/InGaAlAs(barrier) 1.55 mum strain-compensated multi-quantum well (MQW) lasers is presented. Due to a large conduction band discontinuity in this material system, a higher material gain and differential gain can be obtained from such a quantum well (QW) as compared to a traditional InGaAsP/InGaAsP quantum well. The deeper electron well should also improve elevated temperature operating characteristics and reduce the electron spillover from QWs. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and the strain in the barriers. A large number of quantum wells can be uniformly pumped, reducing the carrier density in each individual well. A uniform and low carrier density in all the wells help reduce the total Auger recombination current. High p-doping in the active region is shown to enhance the carrier and gain non-uniformity in the MQWs. A simulated high modulation bandwidth has been demonstrated, promising directly modulated lasers as a low-cost source for short to medium distance (1-10 km) high speed optical links.

Place, publisher, year, edition, pages
2004. Vol. 19, no 5, 615-625 p.
Keyword [en]
quantum-well lasers, differential gain, carrier transport, band offsets, layer, wavelength, bandwidth, diodes, inp, performance
National Category
Telecommunications
Identifiers
URN: urn:nbn:se:kth:diva-23462DOI: 10.1088/0268-1242/19/5/010ISI: 000221732000014Scopus ID: 2-s2.0-2542481881OAI: oai:DiVA.org:kth-23462DiVA: diva2:342160
Note

QC 20100827

Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Photonic devices with MQW active material and waveguide gratings: modelling and characterisation
Open this publication in new window or tab >>Photonic devices with MQW active material and waveguide gratings: modelling and characterisation
2005 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

The research work presented in this thesis deals with modelling, design and characterisation of passive and active optical waveguide devices. The rst part of the thesis is related to algorithm development and numerical modelling of planar optical waveguides and gratings using the Method of Lines (MoL). The basic three-point central-di erence approximation of the δ2=δx2 operator used in the Helmholtz equation is extended to a new ve-point and seven-point approximation with appropriate interface conditions for the TE and TM elds. Di erent structures such as a high-contrast waveguide and a TM surface plasmon mode waveguide are simulated, and improved numerical accuracy for calculating the optical mode and propagation constant is demonstrated. A new fast and stable non-paraxial bi-directional beam propagation method, called Cascading and Doubling algorithm, is derived to model deep gratings with many periods. This algorithm is applied to model a quasi-guided multi-layer anti-resonant reecting optical waveguide (ARROW) grating polarizing structure.

In the second part of the thesis, our focus is on active optical devices such as vertical-cavity and edge-emitting lasers. With a view to improve the bandwidth of directly modulated laser, an InGaAsP quantum well with InGaAlAs barrier is studied due to its favorable band o set for hole injection as well as for electron con nement. Quantum wells with di erent barrier bandgap are grown and direct carrier transport measurements are done using time and wavelength resolved photoluminescence upconversion. Semi-insulating regrown Fabry-Perot lasers are manufactured and experimentally evaluated for light-current, optical gain, chirp and small-signal performance. It is shown that the lasers having MQW with shallow bandgap InGaAlAs barrier have improved carrier transport properties, better T0, higher di erential gain and lower chirp. For lateral current injection laser scheme, it is shown that a narrow mesa is important for gain uniformity across the active region. High speed directly modulated DBR lasers are evaluated for analog performance and a record high spurious free dynamic range of 103 dB Hz2=3 for frequencies in the range of 1-19 GHz is demonstrated. Large signal transmission experiment is performed at 40 Gb/s and error free transmission for back-to-back and through 1 km standard single mode ber is achieved.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. xvi, 82 p.
Series
Trita-MVT, ISSN 0348-4467 ; 2005:3
Keyword
Method of Lines, Grating, ARROW Waveguide, Semiconductor laser, quantum well
National Category
Telecommunications
Identifiers
urn:nbn:se:kth:diva-433 (URN)91-7178-132-3 (ISBN)
Public defence
2005-10-07, Sal C1, KTH-Electrum, 10:00
Opponent
Supervisors
Note
QC 20100827Available from: 2005-09-27 Created: 2005-09-27 Last updated: 2010-08-27Bibliographically approved

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Schatz, Richard

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