Characterization of a liquid-xenon-jet laser-plasma extreme-ultraviolet source
2004 (English)In: Review of Scientific Instruments, ISSN 0034-6748, E-ISSN 1089-7623, Vol. 75, no 6, 2122-2129 p.Article in journal (Refereed) Published
A liquid-xenon-jet laser-plasma source for extreme-ultraviolet (EUV) and soft-x-ray generation has been characterized. Being a source candidate for EUV lithography (EUVL), we especially focus on parameters important for the integration of the source in EUVL systems. The deep-ultraviolet (DUV) out-of-band radiation (lambda=120-400 nm) was quantified, to within a factor of two, using a flying-circus tool together with a transmission-grating spectrograph resulting in a total DUV conversion efficiency (CE) of similar to0.33%/2pisr. The size and the shape of the xenon plasma was investigated using an in-band-only EUV microscope, based on a spherical Mo/Si multilayer mirror and a charge-coupled device detector. Scalability of the source size from 20-270 mum full width at half maximum was shown. The maximum repetition-rate sustainable by the liquid-xenon-jet target was simulated by a double-pulse experiment indicating feasibility of >17 kHz operation. The xenon-ion energy distribution from the plasma was determined in a time-of-flight experiment with a Faraday-cup detector showing the presence of multi-kilo-electron-volt ions. Sputtering of silicon witness plates exposed to the plasma was observed, while a xenon background of >1 mbar was shown to eliminate the sputtering. It is concluded that the source has potential to meet the requirements of future EUVL systems.
Place, publisher, year, edition, pages
2004. Vol. 75, no 6, 2122-2129 p.
x-ray source, euv-lithography, target, performance, mitigation, debris, power, field
IdentifiersURN: urn:nbn:se:kth:diva-23472DOI: 10.1063/1.1755441ISI: 000221793800031ScopusID: 2-s2.0-3042857438OAI: oai:DiVA.org:kth-23472DiVA: diva2:342170
QC 20100525, QC 201110112010-08-102010-08-102012-03-21Bibliographically approved