Self-diffusion of C-12 and C-13 in intrinsic 4H-SiC
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 12, 8469-8471 p.Article in journal (Refereed) Published
Self-diffusion of carbon (C-12 and C-13) in low-doped (intrinsic) 4H-SiC has been studied using secondary ion mass spectrometry. A two layer C-13 enriched structure with C-13/C-12 ratios of 0.01 and 0.1, respectively, have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in Ar atmosphere in a rf heated furnace between 2100 and 2350 degreesC for 15 min-40 h. The C-13 depth profiles reveal a strict roott evolution for the diffusion, and the extracted carbon self-diffusion coefficients closely follow an Arrhenius temperature dependence: D-*=8.4x10(2) exp(-8.50 eV/kT) cm(2)/s. The extracted D-* are found to be 5 orders of magnitude lower than previously reported for the same temperatures in C-14 radio-tracer experiments.
Place, publisher, year, edition, pages
2004. Vol. 95, no 12, 8469-8471 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-23475DOI: 10.1063/1.1751229ISI: 000221843400138ScopusID: 2-s2.0-3142569340OAI: oai:DiVA.org:kth-23475DiVA: diva2:342173
QC 20100525, QC 201110172010-08-102010-08-102012-03-20Bibliographically approved