Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Self-diffusion of C-12 and C-13 in intrinsic 4H-SiC
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
Show others and affiliations
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 12, 8469-8471 p.Article in journal (Refereed) Published
Abstract [en]

Self-diffusion of carbon (C-12 and C-13) in low-doped (intrinsic) 4H-SiC has been studied using secondary ion mass spectrometry. A two layer C-13 enriched structure with C-13/C-12 ratios of 0.01 and 0.1, respectively, have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in Ar atmosphere in a rf heated furnace between 2100 and 2350 degreesC for 15 min-40 h. The C-13 depth profiles reveal a strict roott evolution for the diffusion, and the extracted carbon self-diffusion coefficients closely follow an Arrhenius temperature dependence: D-*=8.4x10(2) exp(-8.50 eV/kT) cm(2)/s. The extracted D-* are found to be 5 orders of magnitude lower than previously reported for the same temperatures in C-14 radio-tracer experiments.

Place, publisher, year, edition, pages
2004. Vol. 95, no 12, 8469-8471 p.
Keyword [en]
silicon-carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23475DOI: 10.1063/1.1751229ISI: 000221843400138Scopus ID: 2-s2.0-3142569340OAI: oai:DiVA.org:kth-23475DiVA: diva2:342173
Note
QC 20100525, QC 20111017Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Linnarsson, Margareta K.

Search in DiVA

By author/editor
Linnarsson, Margareta K.Janson, Martin S.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 27 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf