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Visualization of heavy ion-induced charge production in a CMOS image sensor
KTH, Superseded Departments, Physics.
KTH, Superseded Departments, Physics.
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2004 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 525, no 02-jan, 229-235 p.Article in journal (Refereed) Published
Abstract [en]

A commercial CMOS image sensor was irradiated with heavy ion beams in the several MeV energy range. The image sensor is equipped with a standard video output. The data were collected on-line through frame grabbing and analysed off-line after digitisation. It was shown that the response of the image sensor to the heavy ion bombardment varied with the type and energy of the projectiles. The sensor will be used for the CMS Barrel Muon Alignment system.

Place, publisher, year, edition, pages
2004. Vol. 525, no 02-jan, 229-235 p.
Keyword [en]
radiation tolerance, CMOS image sensor chip, nuclear track visualisation, heavy ion irradiation, detector response
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-23495DOI: 10.1016/j.nima.2004.03.051ISI: 000221974600047Scopus ID: 2-s2.0-3342941799OAI: oai:DiVA.org:kth-23495DiVA: diva2:342193
Note
QC 20100525 QC 20111018. International Conference on Imaging Techniques in Subatomic Physics, Astrophysics, Medicine, Biology and Industry. Stockholm, SWEDEN. JUN 24-27, 2003 Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Kerek, AndrasKlamra, WlodzimierzNorlin, Lars Olov
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