Electronic stopping cross sections in silicon carbide for low-velocity ions with 1 <= Z(1)<= 15
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 96, no 1, 164-169 p.Article in journal (Refereed) Published
The mean projected range R-p for a large number of H-1, H-2, Li-7, B-11, N-14, O-16, Al-27, and P-31 implantations into SiC with ion energies ranging from 0.5 keV to 4 MeV are investigated. From the R-p data the electronic stopping cross sections S-e are extracted. A plot of the extracted S-e at a fixed velocity-below the Fermi velocity of the target valence electrons-versus the ion atomic number Z(1) reveals a local maximum around Z(1)=7. Furthermore, in this velocity regime a slower than velocity-proportional energy dependence, S(e)proportional toE(0.30)-E-0.45, is found for ions with 1less than or equal toZ(1)less than or equal to8, while Al-27 and P-31 exhibit an energy dependence just above velocity-proportionality: S(e)proportional toE(0.52), for both ions. These finding are in good qualitative agreement with the low-velocity electronic stopping behavior previously reported for carbon targets.
Place, publisher, year, edition, pages
2004. Vol. 96, no 1, 164-169 p.
swift ions, implantation, energy, simulation, power, si, distributions, profile, solids, carbon
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-23502DOI: 10.1063/1.1737810ISI: 000222093300023ScopusID: 2-s2.0-3142747642OAI: oai:DiVA.org:kth-23502DiVA: diva2:342200
QC 20100525 QC 201109232010-08-102010-08-102011-09-23Bibliographically approved