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Electronic stopping cross sections in silicon carbide for low-velocity ions with 1 <= Z(1)<= 15
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 96, no 1, 164-169 p.Article in journal (Refereed) Published
Abstract [en]

The mean projected range R-p for a large number of H-1, H-2, Li-7, B-11, N-14, O-16, Al-27, and P-31 implantations into SiC with ion energies ranging from 0.5 keV to 4 MeV are investigated. From the R-p data the electronic stopping cross sections S-e are extracted. A plot of the extracted S-e at a fixed velocity-below the Fermi velocity of the target valence electrons-versus the ion atomic number Z(1) reveals a local maximum around Z(1)=7. Furthermore, in this velocity regime a slower than velocity-proportional energy dependence, S(e)proportional toE(0.30)-E-0.45, is found for ions with 1less than or equal toZ(1)less than or equal to8, while Al-27 and P-31 exhibit an energy dependence just above velocity-proportionality: S(e)proportional toE(0.52), for both ions. These finding are in good qualitative agreement with the low-velocity electronic stopping behavior previously reported for carbon targets.

Place, publisher, year, edition, pages
2004. Vol. 96, no 1, 164-169 p.
Keyword [en]
swift ions, implantation, energy, simulation, power, si, distributions, profile, solids, carbon
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23502DOI: 10.1063/1.1737810ISI: 000222093300023Scopus ID: 2-s2.0-3142747642OAI: oai:DiVA.org:kth-23502DiVA: diva2:342200
Note
QC 20100525 QC 20110923Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Linnarsson, Margareta K.Hallén, Anders

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