Scanning capacitance microscopy investigations of lnGaAs/InP quantum wells
2004 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 459, no 02-jan, 67-70 p.Article in journal (Refereed) Published
In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate InGaAs/InP (latticed matched) quantum wells grown by metal-organic vapor phase epitaxy. Using n-doped InP as barriers with different doping levels, different InGaAs wells structures (5, 10 and 20 nm) were investigated. The capability of SCM to detect electrons in the quantum wells is demonstrated, showing in addition, a systematic and consistent trend for the different well widths and barrier doping levels. The SCM results are qualitatively consistent with electron distribution obtained for 1D Poisson/Schrodinger simulation. Finally, resolution issues in SCM are discussed in terms of tip averaging effects.
Place, publisher, year, edition, pages
2004. Vol. 459, no 02-jan, 67-70 p.
quantum-wells, band-offset, scanning capacitance microscopy, resolution InP, gainp
IdentifiersURN: urn:nbn:se:kth:diva-23523DOI: 10.1016/j.tsf.2003.12.097ISI: 000222217100015ScopusID: 2-s2.0-2942563975OAI: oai:DiVA.org:kth-23523DiVA: diva2:342221
QC 20100525 QC 20111018. nces: 12 [ view related records ] Citation MapCitation Map
Conference: 8th European Vacuum Congress (EVC-8)/2nd Annual Conference of the German-Vacuum-Society (DVG). Berlin, GERMANY. JUN 23-26, 2003 2010-08-102010-08-102011-10-18Bibliographically approved