Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Self-aligned silicides for ohmic contacts in complementary metal-oxide-semiconductor technology: TiSi2, CoSi2 and NiSi
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 22, no 4, 1361-1370 p.Article in journal (Refereed) Published
Abstract [en]

Metal silicides continue to play an indispensable role during the remarkable development of microelectronics. Along with several other technological innovations, the implementation of the self-aligned silicide technology paved the way for a rapid and successful miniaturization of device dimensions for metal-oxide-semiconductor field-effect transistors (MOSFETs) in pace with the Moore's law. The use of silicides has also evolved from creating reliable contacts for diodes, to generating high-conductivity current paths for local wiring, and lately to forming low-resistivity electrical contacts for MOSFETs. With respect to the choice of silicides for complementary metal-oxide- semiconductor (CMOS) technology, a convergence has become clear with the self-alignment technology using only a limited number of silicides, namely TiSi2, CoSi2, and NiSi. The present work discusses the advantages and limitations of TiSi2, CoSi2, and NiSi using the development trend of CMOS technology as a measure. Specifically, the reactive diffusion and phase formation of these silicides in the three terminals of a MOSFET, i.e., gate, source, and drain, are analyzed. This work ends with a brief discussion about future trends of metal silicides in micro/nanoelectronics with reference to potential material aspects and device structures outlined in the International Technology Roadmap for Semiconductors.

Place, publisher, year, edition, pages
2004. Vol. 22, no 4, 1361-1370 p.
Keyword [en]
transmission electron-microscopy, c49-to-c54 polymorphic transformation, metastable phase formation, schottky-barrier diodes, thermal-stability, thin-films, interposed layer, c54 phase, mu-m, titanium disilicide
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23652DOI: 10.1116/1.1688364ISI: 000223322000046Scopus ID: 2-s2.0-4344663116OAI: oai:DiVA.org:kth-23652DiVA: diva2:342351
Note
QC 20100525 QC 20111018. 50th AVS International Symposium. Baltimore, MD. NOV 02-07, 2003 Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Zhang, Shi-Li
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 56 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf