Self-aligned silicides for ohmic contacts in complementary metal-oxide-semiconductor technology: TiSi2, CoSi2 and NiSi
2004 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 22, no 4, 1361-1370 p.Article in journal (Refereed) Published
Metal silicides continue to play an indispensable role during the remarkable development of microelectronics. Along with several other technological innovations, the implementation of the self-aligned silicide technology paved the way for a rapid and successful miniaturization of device dimensions for metal-oxide-semiconductor field-effect transistors (MOSFETs) in pace with the Moore's law. The use of silicides has also evolved from creating reliable contacts for diodes, to generating high-conductivity current paths for local wiring, and lately to forming low-resistivity electrical contacts for MOSFETs. With respect to the choice of silicides for complementary metal-oxide- semiconductor (CMOS) technology, a convergence has become clear with the self-alignment technology using only a limited number of silicides, namely TiSi2, CoSi2, and NiSi. The present work discusses the advantages and limitations of TiSi2, CoSi2, and NiSi using the development trend of CMOS technology as a measure. Specifically, the reactive diffusion and phase formation of these silicides in the three terminals of a MOSFET, i.e., gate, source, and drain, are analyzed. This work ends with a brief discussion about future trends of metal silicides in micro/nanoelectronics with reference to potential material aspects and device structures outlined in the International Technology Roadmap for Semiconductors.
Place, publisher, year, edition, pages
2004. Vol. 22, no 4, 1361-1370 p.
transmission electron-microscopy, c49-to-c54 polymorphic transformation, metastable phase formation, schottky-barrier diodes, thermal-stability, thin-films, interposed layer, c54 phase, mu-m, titanium disilicide
IdentifiersURN: urn:nbn:se:kth:diva-23652DOI: 10.1116/1.1688364ISI: 000223322000046ScopusID: 2-s2.0-4344663116OAI: oai:DiVA.org:kth-23652DiVA: diva2:342351
QC 20100525 QC 20111018. 50th AVS International Symposium. Baltimore, MD. NOV 02-07, 2003 2010-08-102010-08-102011-10-18Bibliographically approved