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Self-aligned silicides for ohmic contacts in complementary metal-oxide-semiconductor technology: TiSi2, CoSi2 and NiSi
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 22, no 4, 1361-1370 p.Article in journal (Refereed) Published
Abstract [en]

Metal silicides continue to play an indispensable role during the remarkable development of microelectronics. Along with several other technological innovations, the implementation of the self-aligned silicide technology paved the way for a rapid and successful miniaturization of device dimensions for metal-oxide-semiconductor field-effect transistors (MOSFETs) in pace with the Moore's law. The use of silicides has also evolved from creating reliable contacts for diodes, to generating high-conductivity current paths for local wiring, and lately to forming low-resistivity electrical contacts for MOSFETs. With respect to the choice of silicides for complementary metal-oxide- semiconductor (CMOS) technology, a convergence has become clear with the self-alignment technology using only a limited number of silicides, namely TiSi2, CoSi2, and NiSi. The present work discusses the advantages and limitations of TiSi2, CoSi2, and NiSi using the development trend of CMOS technology as a measure. Specifically, the reactive diffusion and phase formation of these silicides in the three terminals of a MOSFET, i.e., gate, source, and drain, are analyzed. This work ends with a brief discussion about future trends of metal silicides in micro/nanoelectronics with reference to potential material aspects and device structures outlined in the International Technology Roadmap for Semiconductors.

Place, publisher, year, edition, pages
2004. Vol. 22, no 4, 1361-1370 p.
Keyword [en]
transmission electron-microscopy, c49-to-c54 polymorphic transformation, metastable phase formation, schottky-barrier diodes, thermal-stability, thin-films, interposed layer, c54 phase, mu-m, titanium disilicide
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-23652DOI: 10.1116/1.1688364ISI: 000223322000046ScopusID: 2-s2.0-4344663116OAI: diva2:342351
QC 20100525 QC 20111018. 50th AVS International Symposium. Baltimore, MD. NOV 02-07, 2003 Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-10-18Bibliographically approved

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Zhang, Shi-Li
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