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Surface phase transitions at metal-semiconductor interfaces: a revisit is needed
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2004 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 234, no 04-jan, 274-285 p.Article in journal (Refereed) Published
Abstract [en]

In this article, we review some of the most recent progress and understanding in the low temperature surface phase transitions at prototypical metal-semiconductor interfaces. We essentially focus on quantitative surface structural information obtained by using a significant variety of specialised techniques for the individual phases of a model system, namely, tin on Ge(1 1 1) substrates. The strengths and limitations of the structural results obtained by using scanning tunnelling microscopy, photoelectron diffraction and surface X-ray diffraction are discussed in relation to their support with respect to possible mechanisms recently invoked in the literature as being at the origin of the phase transition. These investigations show that a large progress has been made in this field, taking into account the very valuable experimental and theoretical contributions provided by different groups. There remain, however, essential unresolved problems, which will be analysed in the light of the limitations of these structural methods and the difficulty presented by the complex adsorbate systems studied.

Place, publisher, year, edition, pages
2004. Vol. 234, no 04-jan, 274-285 p.
Keyword [en]
dynamical fluctuations, phase transitions, metal-semiconductor interfaces, photoelectron diffraction, surface X-ray diffraction, charge-density-wave, shift photoelectron diffraction, scanning-tunneling-microscopy, x root-3-ag surface, dynamical fluctuations, electronic-structure, ray-diffraction, sn/ge(111), reconstructions, sn/si(111)
URN: urn:nbn:se:kth:diva-23671ISI: 000223500800049OAI: diva2:342370
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Göthelid, MatsKarlsson, Ulf O.
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Microelectronics and Information Technology, IMIT
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