Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
Show others and affiliations
2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 16, no 31, S3071-S3094 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we present the application of photoreflectance (PR) spectroscopy to investigate the energy level structure of GaInNAs-based quantum wells (QWs). Series of single GaInNAs/GaAs QWs with different nitrogen and indium contents are analysed. The electron effective mass (m(e)(*)) and conduction e band offset (Q(C)) are determined and compared with the literature data. The Q(C) in GaInNAs/GaAs system in the range of investigated GaInNAs content (28-41% of In, 0.3-5.3% of N) has been found to be almost the same as for GaInAs/GaAs system, i.e. Q(C) approximate to 0.8. In addition, the energy level structure for the step-like GaInNAs/Ga(In)NAs/GaAs QWs tailored at 1.3 and 1.55 mum and the Sb-containing Ga(In)NAs/GaAs QWs is investigated. Also, the character of PR transitions, the influence of rapid thermal annealing (RTA) on the energy level structure, and the influence of the carrier localization effect on the efficiency of PR photomodulation are discussed.

Place, publisher, year, edition, pages
2004. Vol. 16, no 31, S3071-S3094 p.
Keyword [en]
molecular-beam epitaxy, high-temperature performance, electron effective-mass, low nitrogen-content, optical-transitions, carrier localization, semiconductor heterostructures, modulation spectroscopy, luminescence properties, room-temperature
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-23690DOI: 10.1088/0953-8984/16/31/006ISI: 000223607200007Scopus ID: 2-s2.0-4043176238OAI: oai:DiVA.org:kth-23690DiVA: diva2:342389
Note
QC 20100525 QC 20110927Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Hammar, Mattias

Search in DiVA

By author/editor
Hammar, Mattias
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Physics: Condensed Matter
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 35 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf