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Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
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2004 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 16, no 31, S3071-S3094 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we present the application of photoreflectance (PR) spectroscopy to investigate the energy level structure of GaInNAs-based quantum wells (QWs). Series of single GaInNAs/GaAs QWs with different nitrogen and indium contents are analysed. The electron effective mass (m(e)(*)) and conduction e band offset (Q(C)) are determined and compared with the literature data. The Q(C) in GaInNAs/GaAs system in the range of investigated GaInNAs content (28-41% of In, 0.3-5.3% of N) has been found to be almost the same as for GaInAs/GaAs system, i.e. Q(C) approximate to 0.8. In addition, the energy level structure for the step-like GaInNAs/Ga(In)NAs/GaAs QWs tailored at 1.3 and 1.55 mum and the Sb-containing Ga(In)NAs/GaAs QWs is investigated. Also, the character of PR transitions, the influence of rapid thermal annealing (RTA) on the energy level structure, and the influence of the carrier localization effect on the efficiency of PR photomodulation are discussed.

Place, publisher, year, edition, pages
2004. Vol. 16, no 31, S3071-S3094 p.
Keyword [en]
molecular-beam epitaxy, high-temperature performance, electron effective-mass, low nitrogen-content, optical-transitions, carrier localization, semiconductor heterostructures, modulation spectroscopy, luminescence properties, room-temperature
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-23690DOI: 10.1088/0953-8984/16/31/006ISI: 000223607200007ScopusID: 2-s2.0-4043176238OAI: diva2:342389
QC 20100525 QC 20110927Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-09-27Bibliographically approved

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Hammar, Mattias
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Microelectronics and Information Technology, IMIT
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