Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Device design for a raised extrinsic base SiGe bipolar technology
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2004 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 48, no 11-okt, 1927-1931 p.Article in journal (Refereed) Published
Abstract [en]

The impact of emitter, inside spacer, and SIC lateral scaling on the AC and DC performance of a raised extrinsic base SiGe HBT has been investigated using the ISE TCAD simulation package and design of experiments methods. Strong first order effects for all three variables were observed while the interactions of the variables had a weaker effect. It was found that as the emitter size shrinks towards 0.1 mum the impact of changes to inside spacer and SIC width on the current gain increased. The response surface design led to an optimized simulated transistor featuring f(T) and f(MAX) values of 214 and 332 GHz, respectively.

Place, publisher, year, edition, pages
2004. Vol. 48, no 11-okt, 1927-1931 p.
Keyword [en]
SiGe, HBT, SIC, TCAD Simulations, profile
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23717DOI: 10.1016/j.sse.2004.05.038ISI: 000223809700044Scopus ID: 2-s2.0-3142743422OAI: oai:DiVA.org:kth-23717DiVA: diva2:342416
Note
QC 20100525 QC 20110922. International Semiconductor Device Research Symposium (ISDRS 03). Washington, DC. DEC 10-12, 2003 Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-10-17Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Malm, B. Gunnar

Search in DiVA

By author/editor
Haralson, ErikMalm, B. GunnarÖstling, Mikael
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Solid-State Electronics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 49 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf