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Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions
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2004 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 38, no 10, 1187-1191 p.Article in journal (Refereed) Published
Abstract [en]

Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p(+)-n-n(+) diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.

Place, publisher, year, edition, pages
2004. Vol. 38, no 10, 1187-1191 p.
Keyword [en]
level transient spectroscopy, radiation defects, epitaxial layers, silicon-carbide, 6h
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-23771DOI: 10.1134/1.1808826ISI: 000224178100008ScopusID: 2-s2.0-8844261167OAI: diva2:342470
QC 20100525 QC 20111102Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-11-02Bibliographically approved

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Hallén, Anders.
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Microelectronics and Information Technology, IMIT
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