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Sol-gel derived versus pulsed laser deposited epitaxial La0.67Ca0.33MnO3 films: structure, transport and effects of post-annealing
KTH, Superseded Departments, Materials Science and Engineering.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 467, no 02-jan, 112-116 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial La0.67Ca0.33MnO3 films have been prepared on LaAlO3 crystals by pulsed laser deposition (PLD) and by a novel all-alkoxide sol-gel technique. Different out-of-plane lattice parameters are found for the as-prepared films, and scanning electron microscopy shows a more porous structure for sol-gel films as compared to PLD films. These differences are largely removed by post annealing at 1000 degreesC. Transport measurements show maximum temperature coefficient of resistivity of 8.2% K-1 at 258 K (PLD) and 6.1% K-1 at 241 K (sol-gel) and colossal magnetoresistance at 560 kA/m of 35% at 263 K (PLD) and 32% at 246 K (sol-gel).

Place, publisher, year, edition, pages
2004. Vol. 467, no 02-jan, 112-116 p.
Keyword [en]
sol-gel, pulsed laser deposition, post-annealing, thin-films, colossal magnetoresistance, manganites, physics
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-23772DOI: 10.1016/j.tsf.2004.03.022ISI: 000224185100017ScopusID: 2-s2.0-4444289978OAI: diva2:342471
QC 20100525 QC 20110916Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-09-16Bibliographically approved

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Fors, RickardKhartsev, SergiyGrishin, Alexander M.
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ReferencesLink to record
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