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Electronic structure of Yb/H-Si(111) interface
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2004 (English)In: Chinese Physics (Beijing), ISSN 1009-1963, E-ISSN 1741-4199, Vol. 13, no 11, 1941-1946 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2004. Vol. 13, no 11, 1941-1946 p.
Keyword [en]
Yb/H-Si (111), photoemission spectra, electronic structure, work function, epitaxial yb silicide, si(111) surface, thin-film, si 111, photoemission, spectroscopy, temperature, hydrogen, metal, reconstruction
Identifiers
URN: urn:nbn:se:kth:diva-23863ISI: 000224924000032OAI: oai:DiVA.org:kth-23863DiVA: diva2:342562
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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He, Sailing

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