Engineering UV-photosensitivity in planar lightwave circuits by plasma enhanced chemical vapour deposition
2004 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 37, no 20, 2804-2809 p.Article in journal (Refereed) Published
Ion bombarding conditions were used to modify glass properties in silica-on-silicon systems during plasma enhanced chemical vapour deposition (PECVD). The induced structural modifications in the SiO2/Si system resulted in different photosensitive responses when irradiated by ArF pulsed laser operating at 193 nm wavelength. Fourier transform infrared spectroscopy was used to study the structural modifications triggered by ion bombarding conditions during film growth. The results were further confirmed by additional characterizations with regard to density (etch rate), refractive index and surface topographic measurements. The demonstrated method could be used not only to engineer UV-photosensitivity but also to control and compensate birefringence in planar lightwave devices.
Place, publisher, year, edition, pages
2004. Vol. 37, no 20, 2804-2809 p.
wave-guides, birefringence control, silicon dioxide, mode conversion, pecvd, films, fabrication, irradiation, sio2
IdentifiersURN: urn:nbn:se:kth:diva-23872DOI: 10.1088/0022-3727/37/20/005ISI: 000225028500006ScopusID: 2-s2.0-7044249758OAI: oai:DiVA.org:kth-23872DiVA: diva2:342571
QC 20100525 QC 201109142010-08-102010-08-102012-01-18Bibliographically approved