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Engineering UV-photosensitivity in planar lightwave circuits by plasma enhanced chemical vapour deposition
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-5967-2651
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2004 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 37, no 20, 2804-2809 p.Article in journal (Refereed) Published
Abstract [en]

Ion bombarding conditions were used to modify glass properties in silica-on-silicon systems during plasma enhanced chemical vapour deposition (PECVD). The induced structural modifications in the SiO2/Si system resulted in different photosensitive responses when irradiated by ArF pulsed laser operating at 193 nm wavelength. Fourier transform infrared spectroscopy was used to study the structural modifications triggered by ion bombarding conditions during film growth. The results were further confirmed by additional characterizations with regard to density (etch rate), refractive index and surface topographic measurements. The demonstrated method could be used not only to engineer UV-photosensitivity but also to control and compensate birefringence in planar lightwave devices.

Place, publisher, year, edition, pages
2004. Vol. 37, no 20, 2804-2809 p.
Keyword [en]
wave-guides, birefringence control, silicon dioxide, mode conversion, pecvd, films, fabrication, irradiation, sio2
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-23872DOI: 10.1088/0022-3727/37/20/005ISI: 000225028500006Scopus ID: 2-s2.0-7044249758OAI: oai:DiVA.org:kth-23872DiVA: diva2:342571
Note
QC 20100525 QC 20110914Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Wosinski, Lech

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