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Giant fluctuations of superconducting order parameter in ferromagnet-superconductor single-electron transistors
KTH, Superseded Departments, Physics.
KTH, Superseded Departments, Physics.ORCID iD: 0000-0003-2339-1692
KTH, Superseded Departments, Physics.ORCID iD: 0000-0001-8534-6577
2004 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 93, no 21Article in journal (Refereed) Published
Abstract [en]

Spin dependent transport in a ferromagnet-superconductor single-electron transistor is studied theoretically taking into account spin accumulation, spin relaxation, gap suppression, and charging effects. A strong dependence of the gap on the magnetic state of the electrodes is found, which gives rise to a magnetoresistance of up to 100%. We predict that fluctuations of the spin accumulation can play such an important role as to cause the island to fluctuate between the superconducting and normal states. Furthermore, the device exhibits a nearly complete gate-controlled spin-valve effect.

Place, publisher, year, edition, pages
2004. Vol. 93, no 21
Keyword [en]
double tunnel-junctions, spin imbalance, critical field, injection, transport
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-23886DOI: 10.1103/PhysRevLett.93.216805ISI: 000225220500067Scopus ID: 2-s2.0-42749102269OAI: oai:DiVA.org:kth-23886DiVA: diva2:342585
Note
QC 20100525 QC 20110916Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Korenivski, VladislavHaviland, David B.

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