Influence of a Si layer intercalated between Si0.75Ge0.25 and Ni on the behavior of the resulting NiSi1-uGeu film
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 96, no 12, 7179-7182 p.Article in journal (Refereed) Published
The interaction of Ni films with epitaxially grown Si-capped and not capped Si0.75Ge0.25 layers on Si(100) at 500degreesC leads to the formation of NiSi1-uGeu films as a bilayer NiSi on NiSi0.75Ge0.25 with a rather clear compositional boundary. In the absence of a Si cap at the surface, NiSi0.75Ge0.25 is formed on NiSi. Epitaxy of NiSi on NiSi0.75Ge0.25, and vice versa, occurs across the compositional boundary. The crystallographic orientation of the NiSi1-uGeu films is strongly affected by the initial layer thicknesses and the layer sequence. Without a Si cap, the NiSi1-uGeu films show an increased fiber texture with increasing Si0.75Ge0.25 thickness. In the presence of a Si cap, on the other hand, the texture collapses into a random orientation already for thin caps. Rapid diffusion of Ge at 500degreesC results in the presence of some Ge at the NiSi/Si interface for a NiSi0.75Ge0.25/NiSi/Si structure. This diffusion is accompanied by an increased roughness at the NiSi/Si interface, as compared to the quite flat NiSi/Si interface in the absence of Ge. For thin Si caps, severe interface roughening with thick NiSi0.75Ge0.25 grains protruding deeply into the remaining Si0.75Ge0.25 is observed.
Place, publisher, year, edition, pages
2004. Vol. 96, no 12, 7179-7182 p.
thin-films, phase-stability, nickel, si1-xgex, contact, silicon, tisi2
IdentifiersURN: urn:nbn:se:kth:diva-23927DOI: 10.1063/1.1814168ISI: 000225482400033ScopusID: 2-s2.0-11044234317OAI: oai:DiVA.org:kth-23927DiVA: diva2:342626
QC 201005252010-08-102010-08-102011-09-27Bibliographically approved