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Characterization of quantum wells by cross-sectional Kelvin probe force microscopy
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 22, 5245-5247 p.Article in journal (Refereed) Published
Abstract [en]

Cross-sectional Kelvin probe force microscopy (KPFM) in ultrahigh vacuum is used to characterize the electronic structure of InGaAs/InP quantum wells. The KPFM signal shows clear peaks at the position of the quantum wells and exhibits a systematic trend for different wells. It is demonstrated that KPFM is capable of detecting quantum wells as narrow as 5 nm. Evidence for carrier accumulation in the quantum wells is observed. A complete quantitative analysis of the quantum well properties is shown to be impeded by tip averaging effects and due to surface/interface states.

Place, publisher, year, edition, pages
2004. Vol. 85, no 22, 5245-5247 p.
Keyword [en]
scanning capacitance microscopy, spreading resistance microscopy, resolution, carriers, surface, vacuum
Identifiers
URN: urn:nbn:se:kth:diva-23928DOI: 10.1063/1.1825622ISI: 000225483700039Scopus ID: 2-s2.0-11044226771OAI: oai:DiVA.org:kth-23928DiVA: diva2:342627
Note
QC 20100525 QC 20110920Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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