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Why can CuInSe2 be readily equilibrium-doped n-type but the wider-gap CuGaSe2 cannot?
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 85, no 24, 5860-5862 p.Article in journal (Refereed) Published
Abstract [en]

The wider-gap members of a semiconductor series such as diamond-->Si-->Ge or AlN-->GaN-->InN often cannot be doped n-type at equilibrium. We study theoretically if this is the case in the chalcopyrite family CuGaSe2-->CuInSe2, finding that: (i) Bulk CuInSe2 (CIS, E-g=1.04 eV) can be doped at equilibrium n-type either by Cd or Cl, but bulk CuGaSe2 (CGS, E-g=1.68 eV) cannot; (ii) result (i) is primarily because the Cu-vacancy pins the Fermi level in CGS farther below the conduction band minimum than it does in CIS, as explained by the doping limit rule; (iii) Cd doping is better than Cl doping, in that Cd-Cu yields in CIS a higher net donor concentration than Cl-Se; and (iv) in general, the system shows massive compensation of acceptors (Cd-III,V-Cu) and donors (Cl-Se,Cd-Cu,In-Cu).

Place, publisher, year, edition, pages
2004. Vol. 85, no 24, 5860-5862 p.
Keyword [en]
solar-cells, total-energy, efficiency, semiconductors, culnse2, films
URN: urn:nbn:se:kth:diva-23945ISI: 000225620200015ScopusID: 2-s2.0-20444464451OAI: diva2:342644
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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