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Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
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2004 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 469-70, 444-449 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide semiconductor technology has emerged as a very good candidate to replace traditional Si devices in special applications such as low loss power switching and high temperature electronics. Ferroelectric thin films exhibit interesting properties for use in semiconductor technology due to the spontaneous polarization which can be switched by an externally applied electric field, and thus are attractive for nonvolatile memory and sensor applications. In this work, the successful realization of ferroelectric thin films in SiC devices is described. The first experimental prototype devices are presented and discussed: A novel integration technique of junction metal-oxide-semiconductor field effect transistors (JMOSFETs) and nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is presented. A constant current control device is based on the SiC JMOSFET. The drain current is effectively controlled and kept constant by a buried junction gate. A new high temperature SiC NVFET with a similar temperature stable current drive is also demonstrated. The nonvolatile memory device, based on the ferroelectric gate stack, was shown to operate up to 300 C with memory effect retained up to 200degreesC.

Place, publisher, year, edition, pages
2004. Vol. 469-70, 444-449 p.
Keyword [en]
ferroelectric thin films, silicon carbide, nonvolatile memory and sensor devices, field-effect transistors, high-power electronics, channel mobility, high-temperature, 4h-sic mosfets, semiconductors
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-23958DOI: 10.1016/j.tsf.2004.09.030ISI: 000225724300076Scopus ID: 2-s2.0-10044254379OAI: oai:DiVA.org:kth-23958DiVA: diva2:342657
Note
QC 20100525 QC 20111018. 31st International Conference on Metallurgical Coatings and Thin Films. San Diego, CA. APR 19-23, 2004 Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Zetterling, Carl-MikaelKhartsev, Sergiy

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