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Demonstrated reliability of 4-Mb MRAM
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2004 (English)In: IEEE transactions on device and materials reliability, ISSN 1530-4388, Vol. 4, no 3, 428-435 p.Article in journal (Refereed) Published
Abstract [en]

The successful commercialization of MRAM will rely on providing customers with a robust and reliable memory product. The intrinsic reliability of magnetoresistive tunnel junction (MTJ) memory bits and the metal interconnect system of MRAM are two areas of great interest due to the new materials involved in this emerging technology. Time dependent dielectric breakdown (TDDB) and resistance drift were the two main failure mechanisms identified for intrinsic memory bit reliability. Results indicated that a lifetime over 10 years is achievable under the operating condition. For metal interconnect system, the initial results of Cu with magnetic cladding have met the reliability performance of typical nonclad Cu backend process in electromigration (EM) and iso-thermal annealing (ITA). Finally data retention is demonstrated over times orders of magnitude longer than 10 years.

Place, publisher, year, edition, pages
2004. Vol. 4, no 3, 428-435 p.
Keyword [en]
dielectric breakdown, electromigration, magnetic memories, magnetoresistive devices, reliability, tunneling, random-access memory, magnetic tunnel-junctions, electromigration, technology
URN: urn:nbn:se:kth:diva-23962ISI: 000225805000017OAI: diva2:342661
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Åkerman, Johan
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