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Boron-enhanced diffusion in excimer laser annealed Si
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
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2004 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 114-15, 114-117 p.Article in journal (Refereed) Published
Abstract [en]

The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10(16) cm(-2) forming a distribution with a width of 20-30nm and a peak concentration of similar to5 x 10(21) cm(-3). It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm(2) results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (similar to10(21) cm(-3)) exceeding the solid solubility level. RTA (30 s at 1100degreesC) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 x 10(20) cm(-3)). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed.

Place, publisher, year, edition, pages
2004. Vol. 114-15, 114-117 p.
Keyword [en]
boron-enhanced diffusion, excimer laser annealing, transient enhanced diffusion, ion-implantation, silicon
URN: urn:nbn:se:kth:diva-23976DOI: 10.1016/j.mseb.2004.07.015ISI: 000226016400022ScopusID: 2-s2.0-10644246771OAI: diva2:342675
QC 20100525 QC 20110927. Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting. Strasbourg, FRANCE. JAN 31, 2004 Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2011-10-18Bibliographically approved

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Linnarsson, Margareta K.
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