Epitaxial colossal magnetoresistive/ferroelectric heterostructures on Si
2004 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, Vol. 67, 69-76 p.Article in journal (Refereed) Published
We report on processing and properties of La-0.67(SrCa)(0.33)MnO3 (LSCMO) films grown by pulsed laser deposition technique on Si(001) substrates buffered with Bi4Ti3O12/CeO2/YSZ heteroepitaxial layers. X-ray diffraction shows cube-on-cube growth of epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the diagonal-on-side manner onto the Bi4Ti3O12 (BTO) template. High resolution TEM images demonstrate sharp interfaces between the buffer layers and LSCMO film as well as rare misfit dislocations on the CeO2/YSZ interface. LSCMO film processing conditions have been optimized to get maximum temperature coefficient of resistivity TCR = 4.4% K-1 and colossal magnetoresistance (CMR) Deltarho/rho similar to 2.9% kOe(-1) @ 294 K. Almost ultimate CMR performance at room temperature has been achieved due to successive improvement of c-axis orientation of layers: full widths at half-maximum (FWHM) = 0.65, 0.58, 0.65, 1.13 and 0.18 degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. Characterization of electrical noise in CMR film yields Noise Equivalent Temperature Difference (NETD) as low as 1.2 muK/rootHz @ 30 Hz and 294 K.
Place, publisher, year, edition, pages
2004. Vol. 67, 69-76 p.
pulsed-laser deposition, thin-films, growth
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-23987ISI: 000226089900009ScopusID: 2-s2.0-33745743275OAI: oai:DiVA.org:kth-23987DiVA: diva2:342686
QC 201005252010-08-102010-08-102010-11-01Bibliographically approved