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Sulfur-doped indium phosphide on silicon substrate brown by ELOG
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8545-6546
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2004 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 7, no 11, G269-G271 p.Article in journal (Refereed) Published
Abstract [en]

The epitaxial lateral overgrowth (ELOG) of sulfur-doped InP on masked InP/Si substrate in a low-pressure hydride vapor phase epitaxy system was investigated. Octahedral shaped ELOG InP templates with smooth surface were formed and studied by cathodoluminescence (CL). High-energy transition at 825 nm due to the band-filling effect was observed in spectra at 80 K. The band edge transition at 875 nm has no red shift caused by thermal strain. As observed in panchromatic image, defect free area was surrounded by high density threading dislocations pinned by sulfur atoms due to impurity hardening.

Place, publisher, year, edition, pages
2004. Vol. 7, no 11, G269-G271 p.
Keyword [en]
vapor-phase epitaxy, inp, overgrowth, crystals, gaas
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-24025DOI: 10.1149/1.1804981ISI: 000228539900042Scopus ID: 2-s2.0-10044268511OAI: oai:DiVA.org:kth-24025DiVA: diva2:342724
Note

QC 20111031

Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Sun, Yan-TingLourdudoss, Sebastian

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