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Total internal reflection type echelle grating demultiplexer based on amorphous silicon nanowire platform
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Centres, Kista Photonics Research Center, KPRC.ORCID iD: 0000-0001-5967-2651
KTH, School of Electrical Engineering (EES).ORCID iD: 0000-0002-3401-1125
2008 (English)In: Proceedings of SPIE - The International Society for Optical Engineering, Hangzhou, 2008, Vol. 7134Conference paper, Published paper (Refereed)
Abstract [en]

In this paper we present measurement results of an ultracompact echelle-grating demultiplexer based on silicon-on-insulator nanowire platform, in which we introduced a total internal reflection design of the grating facets to improve the diffraction efficiency. An average increase of the diffraction efficiency with 3.7dB is observed for the 3 channels compared to a normal design.

Place, publisher, year, edition, pages
Hangzhou, 2008. Vol. 7134
Keyword [en]
Arrayed waveguide grating, Diffraction efficiency, Etched diffraction grating, Silicon-on-insulator, Total internal reflection, Demultiplexer, Echelle gratings, Measurement results, Arrayed waveguide gratings, Demultiplexing, Microsensors, Nanowires, Reflection, Refractive index, Textile fibers, Waveguides, Amorphous silicon
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-24175DOI: 10.1117/12.802558Scopus ID: 2-s2.0-62449154570OAI: oai:DiVA.org:kth-24175DiVA: diva2:344603
Note
QC 20100819Available from: 2010-08-19 Created: 2010-08-19 Last updated: 2013-11-19Bibliographically approved
In thesis
1. Design, Fabrication and Characterization of Planar Lightwave Circuits Based on Silicon Nanowire Platform
Open this publication in new window or tab >>Design, Fabrication and Characterization of Planar Lightwave Circuits Based on Silicon Nanowire Platform
2009 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Optical devices based on Planar Lightwave Circuit (PLC) technology have well been studied due to their inherited advantages from Integrated Circuits (IC), such as: small size, high reliability, mass production and potential integration with microelectronics. Among all the materials, silicon nanowire platform gains more and more interest. The large refractive index difference between core and cladding allows tremendous reduction of the component size. This thesis studies theoretically and experimentally some integrated optical devices based on silicon nanophotonic platform, including echelle grating demultiplexers and photonic crystals.

Some of the numerical methods are introduced first. Scalar integral diffraction method is efficient for calculating the diffraction efficiency of gratings. Beam propagation method and finite-difference time-domain method are also introduced, for simulating the light propagation along the devices.

The fabrication technology and characterization methods are described. The fabrication steps involve: plasma assisted film deposition, E-beam lithography, RIE-etching. All these steps are proceeded under cleanroom environment. The characterization is mainly based on two methods: end-fire coupling and vertical grating coupling. The grating coupler is more efficient compared with the butt-coupling between fiber and nanowires, but is worse solution for final packaging.

Two types of components have been realized and characterized with the above technology. The echelle grating demultiplexer is one of the key components in WDM networks. A method for increasing the diffraction efficiency based on total internal reflection is applied, and a significant improvement of the diffraction efficiency of more than 3dB is achieved. A novel cross-order echelle grating-based triplexer, a bidirectional transceiver for application in the Passive Optical Networks (PON), has been designed and fabricated, which can multi/demultiplex three channels located at 1310nm, 1490nm and 1550nm. Polarization dependence issue of echelle grating demultiplexers has been studied. Two polarization compensation schemes have been proposed, which are for the first time polarization insensitive designs of echelle grating demultiplexers based on silicon nanowire platform.

Photonic crystal devices are also addressed in the thesis. There has been little research on the photonic crystal cavity based on pillar type. A silicon pillar type photonic crystal cavity has been fabricated with the measured Q value as high as about 104, and with an extremely high sensitivity for the changing of the background material or the effective diameter of the pillars. This kind of structure has the advantage on sensing applications compared to the air-hole type structure.

Place, publisher, year, edition, pages
Stockholm: KTH, 2009. 62 p.
Series
Trita-ICT/MAP, 2009:5
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-10620 (URN)
Public defence
2009-06-12, C1,Electrum 1, Isafjordsgatan 26, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20100820Available from: 2009-06-04 Created: 2009-06-04 Last updated: 2011-11-28Bibliographically approved

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Wosinski, LechHe, Sailing

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