Deeply etched SiO2 ridge waveguide for sharp bends
2006 (English)In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 24, no 12, 5019-5024 p.Article in journal (Refereed) Published
A deeply etched SiO2 ridge waveguide including the buffer, core, and cladding is presented for realizing sharp bends. The present SiO2 ridge waveguide has a strong confinement at the lateral direction, while it has a weak confinement at the vertical direction. Due to the strong confinement, a sharp bend (with a very small bending radius of about 10 mu m) is obtained for an acceptable bending loss. A detailed analysis of the loss in a bent waveguide is given by using a finite-difference method. In order to reduce the transition loss, a narrow bending section with an optimal lateral offset is used. A low leakage loss is obtained by using wide straight waveguides, and linear tapers are used to connect the wide straight section and narrow bent sections.
Place, publisher, year, edition, pages
2006. Vol. 24, no 12, 5019-5024 p.
bending, deep etching, ridge waveguide, silicon oxide
IdentifiersURN: urn:nbn:se:kth:diva-24446DOI: 10.1109/JLT.2006.885243ISI: 000243888600050OAI: oai:DiVA.org:kth-24446DiVA: diva2:349954
QC 201009092010-09-092010-09-092010-09-09Bibliographically approved