Correlated development of a (2x2) reconstruction and acharge accumulation layer on the InAs(111)-Bi surface
2011 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 605, no 1-2, 12-17 p.Article in journal (Refereed) Published
We have studied the formation of a Bi induced (2x2) reconstruction on the InAs(111)Bsurface. In connection to the development of the (2x2) reconstruction, a two dimensionalcharge accumulation layer located in the bottom of the InAs conduction band appears as seenthrough a photoemission structure at the Fermi level. Not well ordered Bi layers do not inducea charge accumulation. The Bi induced reconstruction reduces the polarisation of the pristinesurface and changes the initial charge distribution. InAsBi alloying occurs below the surfacewhere Bi act as charge donor leading to the charge accumulation layer.
Place, publisher, year, edition, pages
2011. Vol. 605, no 1-2, 12-17 p.
Adatoms, Indium arsenide, Bismuth, Photoemission, 2 DEG
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-24468DOI: 10.1016/j.susc.2010.09.015ISI: 000286021000003ScopusID: 2-s2.0-78649703757OAI: oai:DiVA.org:kth-24468DiVA: diva2:350179
FunderSwedish Research Council
QC 201009102010-09-102010-09-102011-03-25Bibliographically approved