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Emission rates for electron tunneling from InAs quantum dots to GaAs substrate (vol 96, pg 6477, 2004)
KTH, School of Biotechnology (BIO), Theoretical Chemistry.ORCID iD: 0000-0003-0007-0394
2005 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 98, no 5, 059901- p.Article in journal (Refereed) Published
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2005. Vol. 98, no 5, 059901- p.
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Physical Sciences
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URN: urn:nbn:se:kth:diva-24500DOI: 10.1063/1.2008355ISI: 000231885600094OAI: oai:DiVA.org:kth-24500DiVA: diva2:351110
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QC 20100913Available from: 2010-09-13 Created: 2010-09-13 Last updated: 2017-12-12Bibliographically approved

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Luo, Yi

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