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Monocrystalline-Silicon Microwave MEMS Devices
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
2010 (English)In: Advanced Materials And Technologies For Micro/Nano-Devices, Sensors And Actuators / [ed] Gusev E; Garfunkel E; Dideikin A, Springer Netherlands, 2010, 89-100 p.Conference paper, Published paper (Refereed)
Abstract [en]

Monocrystalline silicon is still the material of first choice for robust MEMS devices, because of its excellent mechanical strength and elasticity, and the large variety of available standard processes. Conventional RF M EMS components consist of thin-film metal structures which are prone to plastic deformation and limit the power handling. The microwave MEN'S devices presented in this work utilize monocrystalline silicon as the structural material of their moving parts, and even prove that high-resistivity silicon is a good dielectric material in the W-band. A very low insertion loss, mechanically multi-stable, static zero-power consuming, laterally moving microswitch concept completely integrated in a 3D micromachined transmission line is presented. Furthermore, a multi-stage phase shifter utilizing high-resistivity monocrystalline silicon as dielectric material for the MEMS-actuated moving block loading the transmission line is shown. Finally, a tuneable high-impedance surface based on distributed MEMS capacitors with a transfer-bonded monocrystalline silicon core is presented. Prototypes of these devices were fabricated and characterization results of the microwave and their actuator performance are given.

Place, publisher, year, edition, pages
Springer Netherlands, 2010. 89-100 p.
Series
NATO Science for Peace and Security Series B-Physics and Biophysics, ISSN 1871-465X
Keyword [en]
RE MEMS, phase shifter, microswitch, high-impedance surface, monocrystalline silicon
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-24727DOI: 10.1007/978-90-481-3807-4_7ISI: 000280184600007Scopus ID: 2-s2.0-77949427180ISBN: 978-90-481-3805-0 (print)OAI: oai:DiVA.org:kth-24727DiVA: diva2:353150
Conference
NATO Advanced Research Workshop on Advanced Materials and Technologies for Micro/Nano-Devices Sensors and Actuators St Petersburg, Russia, June 29-July 02, 2009
Note

QC 20110201

Available from: 2010-09-24 Created: 2010-09-24 Last updated: 2014-08-21Bibliographically approved

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