Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effects of bonding process parameters on wafer-to-wafer alignment accuracy in benzocyclobutene (BCB) dielectric wafer bonding
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0002-0525-8647
Show others and affiliations
2005 (English)In: Materials, Technology and Reliability of Advanced Interconnects-2005 / [ed] Besser PR; McKerrow AJ; Iacopi F; Wong CP; Vlassak JJ, WARRENDALE, PA: MATERIALS RESEARCH SOCIETY , 2005, Vol. 863, 393-398 p.Conference paper, Published paper (Refereed)
Abstract [en]

Wafer-level three-dimensional (3D) integration is an emerging technology to increase the performance and functionality of integrated circuits (ICs). Aligned wafer-to-wafer bonding with dielectric polymer layers (e.g., benzocyclobutene (BCB)) is a promising approach for manufacturing of 3D ICs, with minimum bonding impact on the wafer-to-wafer alignment accuracy essential. In this paper we investigate the effects of thermal and mechanical bonding parameters on the achievable post-bonding wafer-to-wafer alignment accuracy for polymer wafer bonding with 200 trim diameter wafers. Our baseline wafer bonding process with soft-baked BCB (similar to 35% cross-linked) has been modified to use partially cured (similar to 43% crosslinked) BCB. The partially cured BCB layer does not reflow during bonding, minimizing the impact of inhomogeneities in BCB reflow under compression and/or slight shear forces at the bonding interface. As a result, the non-uniformity of the BCB layer thickness after wafer bonding is less than 0.5% of the nominal layer thickness and the wafer shift relative to each other during the wafer bonding process is less than 1 mu m (average) for 200 mm diameter wafers. The critical adhesion energy of a bonded wafer pair with the partially cured BCB wafer bonding process is similar to that with soft-baked BCB.

Place, publisher, year, edition, pages
WARRENDALE, PA: MATERIALS RESEARCH SOCIETY , 2005. Vol. 863, 393-398 p.
Series
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN 0272-9172 ; 863
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-24815ISI: 000232485800061ISBN: 1-55899-816-0 (print)OAI: oai:DiVA.org:kth-24815DiVA: diva2:353432
Conference
Symposium on Materials, Technology and Reliability of Advanced Interconnects held at the 2005 MRS Spring Meeting San Francisco, CA, MAR 28-APR 01, 2005
Note
QC 20100927Available from: 2010-09-27 Created: 2010-09-27 Last updated: 2010-09-27Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Niklaus, Frank

Search in DiVA

By author/editor
Niklaus, Frank
By organisation
Microsystem Technology
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

isbn
urn-nbn

Altmetric score

isbn
urn-nbn
Total: 39 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf