Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
CMP compatibility of partially cured benzocyclobutene (BCB) for a via-first 3D IC process
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0002-0525-8647
Show others and affiliations
2005 (English)In: Chemical-Mechanical Planarization-Integration, Technology and Reliability / [ed] Kumar A; Lee JA; Obeng YS; Vos I; Johns EC, WARRENDALE, PA: MATERIALS RESEARCH SOCIETY , 2005, Vol. 867, 63-68 p.Conference paper, Published paper (Refereed)
Abstract [en]

Wafer-level three dimensional (3D) IC technology offers the promise of decreasing RC delays by reducing long interconnect lines in high performance ICs. This paper focuses on a via-first 3D IC platform, which utilizes a back-end-of-line (BEOL) compatible damascene-patterned layer of copper and Benzocyclobutene (BCB). This damascene-patterned copper/BCB serves as a redistribution layer between two fully fabricated wafer sets of ICs and offers the potential of high bonding strength and low contact resistance for inter-wafer interconnects between the wafer pair. The process would thus combine the electrical advantages of 3D technology using Cu-to-Cu bonding with the mechanical advantages of 3D technology using BCB-to-BCB bonding. In this work, partially cured BCB has been evaluated for copper damascene patterning using commercially available CMP slurries as a key process step for a via-first 3D process flow. BCB is spin-cast on 200 mm wafers and cured at temperatures ranging from 190 degrees C to 250 degrees C, providing a wide range of crosslink percentage. These films are evaluated for CMP removal rate, surface damage (surface scratching and embedded abrasives), and planarity with commercially available copper CMP slurries. Under baseline process parameters, erosion, and roughness changes are presented for single-level damascene test patterns. After wafers are bonded under controlled temperature and pressure, the bonding interface is inspected optically using glass-to-silicon bonded wafers, and the bond strength is evaluated by a razor blade test.

Place, publisher, year, edition, pages
WARRENDALE, PA: MATERIALS RESEARCH SOCIETY , 2005. Vol. 867, 63-68 p.
Series
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN 0272-9172 ; 867
Keyword [en]
COPPER INTERCONNECTS
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-24814ISI: 000231387500010ISBN: 1-55899-820-9 (print)OAI: oai:DiVA.org:kth-24814DiVA: diva2:353471
Conference
Symposium on Chemical-Mechanical Planarization held at the 2005 MRS Spring Meeting San Francisco, CA, MAR 28-31, 2005
Note
QC 20100927Available from: 2010-09-27 Created: 2010-09-27 Last updated: 2010-09-27Bibliographically approved

Open Access in DiVA

No full text

Authority records BETA

Niklaus, Frank

Search in DiVA

By author/editor
Niklaus, Frank
By organisation
Microsystem Technology
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

isbn
urn-nbn

Altmetric score

isbn
urn-nbn
Total: 59 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf