Fine keyed alignment and bonding for wafer-level 3D ICs
2006 (English)In: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects / [ed] Tsui TY; Joo YC; Michaelson L; Lane M; Volinsky AA, WARRENDALE, PA: MATERIALS RESEARCH SOCIETY , 2006, Vol. 914, 433-438 p.Conference paper (Refereed)
Precise wafer-to-wafer alignment accuracy is crucial to interconnecting circuits on different wafers in three dimensional integrated circuits. We discuss the use of fabricated structures on wafer surfaces to mechanically achieve higher alignment accuracy than can be achieved with our existing (baseline) alignment protocol. The keyed alignment structures rely on structures with tapered side-walls that can slide into each after two wafers are "pre-aligned" using our baseline alignment protocol. Results indicate that alignment accuracy is about a quarter micron, well below the one micron alignment accuracy obtained in our baseline alignment procedure using commercial state-of-the-art wafer alignment equipment. In addition to improving alignment, the alignment structures also hinder undesirable bonding-induced misalignment. The keyed alignment structures are also promising for nano-imprint lithography.
Place, publisher, year, edition, pages
WARRENDALE, PA: MATERIALS RESEARCH SOCIETY , 2006. Vol. 914, 433-438 p.
, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN 0272-9172
IdentifiersURN: urn:nbn:se:kth:diva-24812ISI: 000242213700063ScopusID: 2-s2.0-33749644219OAI: oai:DiVA.org:kth-24812DiVA: diva2:353481
Symposium on Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects held at the 2006 MRS Spring Meeting San Francisco, CA, APR 18-21, 2006
QC 201009272010-09-272010-09-272010-09-27Bibliographically approved