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High-power InGaAs/GaAs 1.3 mu m VCSELs based on novel electrical confinement scheme (vol 44, pg 414, 2008)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-9040-4740
2008 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 44, no 13Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2008. Vol. 44, no 13
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-24826DOI: 10.1049/el:20080056ISI: 000257785600037OAI: oai:DiVA.org:kth-24826DiVA: diva2:353488
Note

QC 20100927. Erratum.

Available from: 2010-09-27 Created: 2010-09-27 Last updated: 2017-06-08Bibliographically approved

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Hammar, Mattias

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