Characterization of transfer bonded silicon bolometer arrays
2004 (English)In: INFRARED TECHNOLOGY AND APPLICATIONS XXX, BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING , 2004, Vol. 5406, 521-530 p.Conference paper (Refereed)
In this paper we present the design, fabrication and characterization of arrays of boron doped polycryslalline silicon bolometers, The bolometer arrays have been fabricated using CMOS compatible wafer-level transfer bonding. The transfer bonding technique allows the bolometer materials to be deposited and optimized on a separate substrate and then, in a subsequent integration step to be transferred to the read-out integrated circuit (ROIC) wafer. Transfer bonding allows thermal infrared detectors with crystalline and/or high temperature deposited, high performance temperature sensing materials to be integrated on CMOS based ROICs. Uncooled infrared bolometer arrays with 18x18 pixels and with 320x240 pixels have been fabricated on silicon substrates. Individual pixels of the arrays can be addressed for characterization purposes. The resistance of the bolometers has been measured to be in the 50 kOmega range and the temperature coefficient of resistance (TCR) of the bolometer has been measured to be -0.52 %/K. The pixel structure is designed as a resonant absorbing cavity, with expected absorbance above 90%, in the wavelength interval of 8 to 12 mum. The measured results are in good agreement with the predicted absorbance values.
Place, publisher, year, edition, pages
BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING , 2004. Vol. 5406, 521-530 p.
, PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, ISSN 0277-786X ; 5406
uncooled FPA, transfer bonding, CMOS compatible, polycrystalline silicon bolometer
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-24792DOI: 10.1117/12.565894ISI: 000224150900058ScopusID: 2-s2.0-10044228537ISBN: 0-8194-5329-3OAI: oai:DiVA.org:kth-24792DiVA: diva2:354933
Conference on Infrared Technology and Applications XXX Orlando, FL, APR 12-16, 2004
QC 201010052010-10-052010-09-272011-11-01Bibliographically approved