Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Broadband CMOS LNAs for IR-UWB receiver
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2005 (English)In: Norchip 2005, Proceedings, New York: IEEE , 2005, 273-276 p.Conference paper, Published paper (Refereed)
Abstract [en]

Two single-ended wideband LNAs for Ultrawide-band receiver have been designed and implemented in 0.18 mu m CMOS technology. The first one, a feed-back LNA, is a two-stage amplifier with a improved feedback loop, which provides high gain and enables the input port to match with 500 in a wide frequency range from 500MHz to 8GHz. The second one, an LC low-pass-filter matched LNA, employs a third-order low pass filter in the input port to match a frequency range from 3GHz to 8GHz. In both of the LNAs, the input stage is a common source amplifier. Inductive shunt peaking is used for maximizing the bandwidth and flatting the gain. In the feed-back LNA, measurements show that the maximum gain is 11.5dB, the 3-dB; bandwidth is from 500MHz to 7GHz, IIP3 is -2.2dBm at 4GHz, the minimum noise figure is around 5.7dB, S11 is less than 8.2dB, and the power consumption is 14mW. In the LC filter matched LNA, the 3-dB bandwidth is from 3GHz to 7.3GHz. The maximum gain is 9.6dB, IIP3 is 0dBm at 4 GHz, the minimum noise figure is 7.6dB, S11 is less than -13.4dB and the power consumption is 23mW.

Place, publisher, year, edition, pages
New York: IEEE , 2005. 273-276 p.
Keyword [en]
Bandwidth, CMOS integrated circuits, Gain control, Power amplifiers, Signal receivers, Spurious signal noise
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-25018DOI: 10.1109/NORCHP.2005.1597042ISI: 000241010100067Scopus ID: 2-s2.0-33847219622ISBN: 1-4244-0064-3 (print)OAI: oai:DiVA.org:kth-25018DiVA: diva2:355006
Conference
23rd Norchip Conference Oulu, FINLAND, NOV 21-22, 2005
Note

QC 20101005

Available from: 2010-10-05 Created: 2010-10-05 Last updated: 2012-09-26Bibliographically approved
In thesis
1. System-on-package solutions for multi-band RF front end
Open this publication in new window or tab >>System-on-package solutions for multi-band RF front end
2005 (English)Doctoral thesis, comprehensive summary (Other scientific)
Abstract [en]

Advances in microelectronics technology have enabled us to integrate a complex electronic system (such as a radio) on a single chip or in a single package module, known as system-on-chip (SoC) and system-on-package (SoP) paradigms. This brings not only new opportunities for system integration, but also challenges in design and implementation. One of these challenges is how to achieve an optimum total solution of system integration via chip and package co-design, because there is no tool or design methodology available for such kind of optimization. This thesis focuses on innovative multi-band multi-standard radio front-end design and explores a new design methodology. The motivation of developing this design methodology is to achieve an optimum total solution for radio system implementation via chip and package co-design and co-optimization.

The methodology starts from RF packaging and components modeling. Necessary models for both on-chip and off-chip passives are developed. Parasitic effects of packages for radio chips are modeled for particular frequencies. Compared with high-speed digital packaging, RF packaging normally deals with narrow band signals. It is possible to absorb some unwanted parasitics by designing proper port matching networks. In addition, cost-performance trade-offs are performed. In this context, we first developed process and technology based cost models, which include parameters like chip real estate, raw materials, package, test and rework. Impact of process variation on final yield has also been considered in the models by using a statistical analysis approach. Performance of different design options is measured by a special FoM (figure-of-merit). Each type of analog/RF circuit (such as LNA, PA and ADC) has its own dedicated FoM. Through a series of cost-performance trade-offs for different on-chip versus off-chip passives and partitions, an optimum total solution is obtained.

Finally, this methodology was demonstrated via a number of design examples for multi-band multi-standard radio front-end. The author has explored the optimum solutions for different circuit architectures and process technologies encompassing parallel, concurrent and digitally programmable multi-band radio frond-end blocks. It is interesting to find that, for complex RF circuits like a multi-band multi-standard radio, moving some passives off-chip will have significant cost-savings. In addition to the above contributions, the author has also developed an MCM-D technology on LCP and glass substrates, based on metal deposition and BCB spin-coating at KTH clean room. The author has also performed some preliminary studies on UWB radio for RFID applications.

Place, publisher, year, edition, pages
Stockholm: KTH, 2005. ix, 88 p.
Series
Trita-IMIT. LECS, ISSN 1651-4076 ; 2005:08
Keyword
chip-package co-design, multi-band radio, system-on-package
National Category
Condensed Matter Physics
Identifiers
urn:nbn:se:kth:diva-482 (URN)91-7178-187-0 (ISBN)
Public defence
2005-11-25, Sal D, KTH-Forum, 10:00
Opponent
Supervisors
Note
QC 20101005Available from: 2005-11-09 Created: 2005-11-09 Last updated: 2010-10-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Duo, XinzhongZheng, Li-RongIsmail, MuhammedTenhunen, Hannu
By organisation
Microelectronics and Information Technology, IMIT
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 104 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf