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A high efficiency silicon nitride grating coupler
Institut d'Electronique Fondamentale, CNRS UMR 8622, Bat. 220, Universite Paris-sud XI, F-91405 ORSAY cedex - France.
Institut d'Electronique Fondamentale, CNRS UMR 8622, Bat. 220, Universite Paris-sud XI, F-91405 ORSAY cedex - France.
Institut d'Electronique Fondamentale, CNRS UMR 8622, Bat. 220, Universite Paris-sud XI, F-91405 ORSAY cedex - France.
Institut d'Electronique Fondamentale, CNRS UMR 8622, Bat. 220, Universite Paris-sud XI, F-91405 ORSAY cedex - France.
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2007 (English)In: 2007 4th IEEE International Conference on Group IV Photonics, IEEE , 2007, 157-159 p.Conference paper, Published paper (Refereed)
Abstract [en]

The experimental demonstration of a high efficiency silicon nitride grating coupler is reported for wavelengths from lambda=1.25 to 1.45 mu m for TE polarization. At the resonant angle, a coupling efficiency higher than 60% has been measured.

Place, publisher, year, edition, pages
IEEE , 2007. 157-159 p.
Keyword [en]
microphotonics, waveguide, silicon nitride, grating coupler
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-24759ISI: 000253465500053Scopus ID: 2-s2.0-51849163675ISBN: 978-1-4244-0934-1 (print)OAI: oai:DiVA.org:kth-24759DiVA: diva2:356103
Conference
2007 4th International Conference on Group IV Photonics, GFP 2007; ; 19 September 2007 through 21 September 2007
Note

QC 20101011

Available from: 2010-10-11 Created: 2010-09-27 Last updated: 2014-11-28Bibliographically approved

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Gylfason, Kristinn B.Sohlström, Hans

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