SELECTIVE ELECTROCHEMICAL RELEASE ETCHING OF EUTECTICALLY BONDED MICROSTRUCTURES
2009 (English)In: 15th IEEE International Conference on Solid-State Sensors, Actuators and Microsystems (IEEE TRANSDUCERS 2009): 15th International Conference on Solid-State Sensors, IEEE conference proceedings, 2009, 743-746 p.Conference paper (Refereed)
TThis paper reports on the successful demonstration of a novel microfabrication method in which eutectic gold bonded microstructures are selectively electrochemically release etched. This method offers several advantages: both a strong permanent bond and a temporary bond is achieved on the same die, the footprint of the temporary bonded structures is allowed to be larger than the footprint of the permanently bonded structures and the used etchants provide a larger process compatibility than the etchants of other release etch methods. Eutectically bonded 350 mum wide silicon structures were fully released after 1 hour of electrochemical etching followed by 1.5 hours wet etching of the TiW adhesion layer.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2009. 743-746 p.
Wafer bonding, electrochemical etching, eutectic bonding, release etching, selective etching
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-25357DOI: 10.1109/SENSOR.2009.5285586ScopusID: 2-s2.0-71449100989ISBN: 978-1-4244-4193-8Archive number: 978-1-4244-4193-8OAI: oai:DiVA.org:kth-25357DiVA: diva2:358577
15th IEEE International Conference on Solid-State Sensors, Actuators and Microsystems (IEEE TRANSDUCERS 2009), Denver,CO, 21-25 Jun, 2009
QC 201010222010-10-222010-10-192015-06-03Bibliographically approved