High-performance quantum-well silicon-germanium bolometers using IC-compatible integration for low-cost infrared imagers
2009 (English)In: TRANSDUCERS 2009: 15th International Conference on Solid-State Sensors, 2009, Vol. Actuators and Microsystems, 2214-2217 p.Conference paper (Refereed)
This paper reports on the realization and characterization of the very first quantum-well (QW) mono-crystalline Si/SiGe 18x18 pixel infrared bolometer arrays that are manufactured using IC compatible heterogeneous 3D integration on fan-out wafers. This integration process enables bolometer materials on top of CMOS-based integrated circuits that can not be integrated with conventional monolithic deposition techniques. The manufactured bolometer arrays have a negative temperature coefficient of resistance (TCR) of 2.8%/K. Measurements of the 1/f noise showed a higher value than expected for the bolometers. This result can be compared to lower values of noise achieved for samples of the thermistor material and is believed to result from imperfect metal contacts.
Place, publisher, year, edition, pages
2009. Vol. Actuators and Microsystems, 2214-2217 p.
Infrared, SiGe, TCR, bolometer, heterogeneous integration, quantum well
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-25356DOI: 10.1109/SENSOR.2009.5285617ScopusID: 2-s2.0-71449090160OAI: oai:DiVA.org:kth-25356DiVA: diva2:358582
Solid-State Sensors, Actuators and Microsystems Conference, 2009, Denver
QC 201010222010-10-222010-10-192011-11-22Bibliographically approved