Electrically active defects in silicon produced by ion channeling
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, no 22, 3865-3867 p.Article in journal (Refereed) Published
Low-dose implantations with 65 Si and 150 keV Ge ions into the n(+) top layer of Si n(+)p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM calculations and results from 2 MeV electron irradiations. Previously, ion channeling was disregarded in studies on point defect migration at room temperature using ion implantation in surface layers. In our studies, ion channeling is dominant and it overwhelms any contribution from point defect diffusion.
Place, publisher, year, edition, pages
2003. Vol. 82, no 22, 3865-3867 p.
room-temperature, point-defects, migration, si, traps
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-25714DOI: 10.1063/1.1580640ISI: 000183124200019OAI: oai:DiVA.org:kth-25714DiVA: diva2:359548
QC 201010282010-10-282010-10-282010-10-28Bibliographically approved